The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Sep. 19, 2022
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Chaehoon Kim, Suwon-si, KR;
Junyoung Ko, Hwaseong-si, KR;
Sangwan Nam, Hwaseong-si, KR;
Minjae Seo, Yongin-si, KR;
Jiwon Seo, Seoul, KR;
Hojun Lee, Uiwang-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/20 (2006.01); G11C 16/16 (2006.01); G11C 16/04 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0425 (2013.01); G11C 16/16 (2013.01); G11C 16/20 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract
A method of operating a nonvolatile memory device which includes at least one memory block is provided. The method includes providing a plurality of word-lines with a voltage during a word-line set-up period, precharging a plurality of driving lines with a voltage during a word-line development period, detecting a voltage drop of a sensing node during a sensing period, and detecting leakage based on the voltage drop.