The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jul. 04, 2022
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Hieu Van Tran, San Jose, CA (US);
Thuan Vu, San Jose, CA (US);
Stephen Trinh, San Jose, CA (US);
Stanley Hong, San Jose, CA (US);
Anh Ly, San Jose, CA (US);
Steven Lemke, Boulder Creek, CA (US);
Vipin Tiwari, Dublin, CA (US);
Nhan Do, Saratoga, CA (US);
Assignee:
SILICON STORAGE TECHNOLOGY, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/54 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01); G11C 16/16 (2006.01); G11C 16/34 (2006.01); G11C 16/10 (2006.01); G06N 3/065 (2023.01);
U.S. Cl.
CPC ...
G11C 11/54 (2013.01); G06N 3/065 (2023.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/16 (2013.01); G11C 16/3418 (2013.01); G11C 2216/04 (2013.01);
Abstract
Numerous examples for performing tuning of a page or a word of non-volatile memory cells in an analog neural memory are disclosed. In one example, a method comprises programming a word or page of non-volatile memory cells in an analog neural memory system; and identifying any fast bits in the word or page of non-volatile memory cells.