The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 24, 2023

Filed:

Nov. 18, 2019
Applicant:

Asml Netherlands B.v., Veldhoven, NL;

Inventors:

Quan Zhang, San Jose, CA (US);

Yong-Ju Cho, San Jose, CA (US);

Zhangnan Zhu, San Jose, CA (US);

Boyang Huang, Shenzhen, CN;

Been-Der Chen, Milpitas, CA (US);

Assignee:

ASML NETHERLANDS B.V., Veldhoven, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/30 (2020.01); G03F 7/00 (2006.01); G06F 30/398 (2020.01); G03F 1/36 (2012.01); G03F 1/70 (2012.01); G03F 1/44 (2012.01); G06F 119/18 (2020.01);
U.S. Cl.
CPC ...
G06F 30/398 (2020.01); G03F 1/36 (2013.01); G03F 1/70 (2013.01); G03F 7/70441 (2013.01); G03F 1/44 (2013.01); G06F 2119/18 (2020.01);
Abstract

A method for generating a mask pattern to be employed in a patterning process. The method including obtaining (i) a first feature patch including a first polygon portion of an initial mask pattern, and (ii) a second feature patch including a second polygon portion of the initial mask pattern; adjusting the second polygon portion at a patch boundary between the first feature patch and the second feature patch such that a difference between the first polygon portion and the second polygon portion at the patch boundary is reduced; and combining the first polygon portion and the adjusted second polygon portion at the patch boundary to form the mask pattern.


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