The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 24, 2023
Filed:
Jul. 06, 2022
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventors:
Giorgio Agostini, San Giacomo di Laives, IT;
Stephan Haringer, Ciardes, IT;
Marco Zardoni, Merano, IT;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/20 (2006.01); C30B 15/10 (2006.01); C30B 15/30 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 15/20 (2013.01); C30B 15/10 (2013.01); C30B 15/30 (2013.01); C30B 29/06 (2013.01);
Abstract
Methods for growing a single crystal silicon ingot are disclosed. A dynamic state chart that monitors a plurality of ingot growth parameters may be produced and used during production of single crystal silicon ingots. In some embodiments, the dynamic state chart is a dynamic circle map chart having a plurality of sectors with each sector monitoring an ingot growth parameter.
Quick Actions:
Agostini, Giorgio. (2023). Production and use of dynamic state charts when growing a single crystal silicon ingot (U.S. Patent No. 11795571). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11795571
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile