The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11793095 B1

Date of Patent:

Oct. 17, 2023

Filed:

Aug. 03, 2021

Resistive random access memory and method of fabricating the same

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Po-Yen Hsu, Taichung, TW;

Bo-Lun Wu, Taichung, TW;

Shih-Ning Tsai, Taichung, TW;

Tse-Mian Kuo, Taichung, TW;

Assignee:

Winbond Electronics Corp., Taichung, TW;

Attorney:

JCIPRNET

Primary Examiner:

Michael T Tran

Int. Cl.

CPC ...

H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);

U.S. Cl.

CPC ...

H10N 70/841 (2023.02); H10B 63/80 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/826 (2023.02); H10N 70/8833 (2023.02);

Abstract

A resistive random access memory, including a first electrode layer and a second electrode layer disposed opposite to each other, a variable resistance layer located between the first electrode layer and the second electrode layer, an oxygen exchange layer located between the variable resistance layer and the second electrode layer, a vacancy-supplying layer surrounding a middle sidewall of the oxygen exchange layer; and a vacancy-driving electrode layer located on the vacancy-supply layer and surrounding an upper sidewall of the oxygen exchange layer, is provided. A method of fabricating the resistive random access memory is also provided.

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