The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Dec. 07, 2020
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shih-Wei Su, Tainan, TW;
Da-Jun Lin, Kaohsiung, TW;
Chih-Wei Chang, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Ting-An Chien, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H10N 70/00 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10N 70/063 (2023.02); H10B 63/00 (2023.02); H10N 70/028 (2023.02); H10N 70/041 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02);
Abstract
The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a resistance random access memory on the substrate, an upper electrode, a lower electrode and a resistance conversion layer between the upper electrode and the lower electrode, and a cap layer covering the outer side of the resistance random access memory, the cap layer has an upper half and a lower half, and the upper half and the lower half contain different stresses.