The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jul. 13, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Shy-Jay Lin, Hsinchu, TW;
Mingyuan Song, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01F 10/32 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3259 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H01F 10/3286 (2013.01); H10N 50/85 (2023.02);
Abstract
The disclosure is directed to spin-orbit torque ('SOT') magnetoresistive random-access memory ('MRAM') (“SOT-MRAM”) structures and methods. A SOT channel of the SOT-MRAM includes multiple heavy metal layers and one or more dielectric dusting layers each sandwiched between two adjacent heavy metal layers. The dielectric dusting layers each include discrete molecules or discrete molecule clusters of a dielectric material scattered in or adjacent to an interface between two adjacent heavy metal layers.