The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Aug. 16, 2020
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Desmond Jia Jun Loy, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Shyue Seng Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/41 (2006.01); H10B 63/00 (2023.01); G11C 7/18 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/34 (2023.02); G11C 7/18 (2013.01); H10N 70/8265 (2023.02); H10N 70/841 (2023.02); H10N 70/8836 (2023.02);
Abstract

The present disclosure generally relates to memory devices and methods of forming the same. More particularly, the present disclosure relates to resistive random-access (ReRAM) memory devices. The present disclosure provides a memory device including a first electrode, a dielectric cap above the first electrode, a second electrode laterally adjacent to the first electrode, in which an upper surface of the second electrode is substantially coplanar with an upper surface of the dielectric cap, and a resistive layer between the first electrode and the second electrode. An edge of the first electrode is electrically coupled to an edge of the second electrode by at least the resistive layer.


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