The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Apr. 19, 2021
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 51/20 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 51/20 (2023.02); H10B 63/34 (2023.02); H10B 63/845 (2023.02);
Abstract
A vertical repetition of a unit layer stack includes an insulating layer, a first sacrificial material layer, another insulating layer, and a second sacrificial material layer. A memory opening is formed through the vertical repetition, and a memory opening fill structure is formed in the memory opening. A backside trench is formed through the alternating stack. The first sacrificial material layers are replaced with first electrically conductive layers, and the second sacrificial material layer are replaced with second electrically conductive layers after formation of the first electrically conductive layers.