The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Aug. 02, 2021
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Shi-You Liu, Kaohsiung, TW;
Shih-Cheng Chen, Tainan, TW;
Chia-Wei Chang, Tainan, TW;
Chia-Ming Kuo, Kaohsiung, TW;
Tsai-Yu Wen, Tainan, TW;
Yu-Ren Wang, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/08 (2006.01); H01L 23/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/02126 (2013.01); H01L 23/10 (2013.01); H01L 29/0847 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract
A semiconductor device includes a fin protruding from a substrate and extending in a first direction, a gate structure extending on the fin in a second direction, and a seal layer located on the sidewall of the gate structure. A first peak carbon concentration is disposed in the seal layer. A first spacer layer is located on the seal layer. A second peak carbon concentration is disposed in the first spacer layer. A second spacer layer is located on the first spacer layer.