The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Sep. 29, 2021
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 29/0821 (2013.01); H01L 29/41708 (2013.01); H01L 29/66242 (2013.01);
Abstract
A bipolar transistor includes a substrate, a sub-collector layer, a collector layer, a base layer, an emitter layer, a passivation layer, and a collector electrode. The sub-collector layer is formed over the substrate. The collector layer is formed over the sub-collector layer. The base layer is formed over the collector layer. The emitter layer is formed over the base layer. The passivation layer is formed over the substrate and covering a sidewall of the collector layer. The collector electrode is connected to the sub-collector layer through an opening in the passivation layer. The opening exposes at least a portion of the sub-collector layer.