The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Mar. 18, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Kamal M. Karda, Boise, ID (US);

Haitao Liu, Boise, ID (US);

Durai Vishak Nirmal Ramaswamy, Boise, ID (US);

Karthik Sarpatwari, Boise, ID (US);

Richard E. Fackenthal, Carmichael, CA (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/02 (2006.01); H01L 27/092 (2006.01); G11C 5/02 (2006.01); H10B 10/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/42372 (2013.01); G11C 5/025 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H10B 10/12 (2023.02);
Abstract

An inverter includes a transistor, an additional transistor overlying the transistor, and a hybrid gate electrode interposed between and shared by the transistor and the additional transistor. The hybrid gate electrode includes a region overlying a channel structure of the transistor, an additional region overlying the region and underlying an additional channel structure of the additional transistor, and further region interposed between the region and the additional region. The region has a first material composition. The additional region has a second material composition different than the first material composition of the region. Memory devices and electronic systems are also described.


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