The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Aug. 30, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chih-Fan Huang, Kaohsiung, TW;

Hsiang-Ku Shen, Hsinchu, TW;

Dian-Hau Chen, Hsinchu, TW;

Yen-Ming Chen, Chu-Pei, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 27/10 (2006.01); H01L 27/07 (2006.01); H01L 21/321 (2006.01);
U.S. Cl.
CPC ...
H01L 28/24 (2013.01); H01L 21/28531 (2013.01); H01L 27/0676 (2013.01); H01L 27/0682 (2013.01); H01L 27/0794 (2013.01); H01L 27/101 (2013.01); H01L 21/3212 (2013.01);
Abstract

Semiconductor structures and methods of forming the same are provided. A method according to an embodiment includes forming a conductive feature and a first conductive plate over a substrate, conformally depositing a dielectric layer over the conductive feature and the first conductive plate, conformally depositing a conductive layer over the conductive feature and the first conductive plate, and patterning the conductive layer to form a second conductive plate over the first conductive plate and a resistor, the resistor includes a conductive line extending along a sidewall of the conductive feature. By employing the method, a high-resistance resistor may be formed along with a capacitor regardless of the resolution limit of, for example, lithography.


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