The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
May. 21, 2021
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 23/522 (2006.01); H01L 23/48 (2006.01); H01L 29/06 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 27/11 (2006.01); H01L 49/02 (2006.01); H01L 21/8234 (2006.01); H10B 10/00 (2023.01); H10B 61/00 (2023.01); H10N 59/00 (2023.01); H01L 21/8258 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823475 (2013.01); H01L 23/481 (2013.01); H01L 23/5222 (2013.01); H01L 23/5226 (2013.01); H01L 27/0688 (2013.01); H01L 28/40 (2013.01); H01L 29/0653 (2013.01); H01L 29/66545 (2013.01); H10B 10/12 (2023.02); H10B 61/00 (2023.02); H10N 59/00 (2023.02); H01L 21/8258 (2013.01); H01L 27/0605 (2013.01);
Abstract
A method comprises growing an epitaxial layer on a first region of a first wafer while remaining a second region of the first wafer exposed; forming a first dielectric layer over the epitaxial layer and the second region; forming a first transistor on a second wafer; forming a second dielectric layer over the first transistor; bonding the first and second dielectric layers; and forming second and third transistors on the epitaxial layer and on the second region of the first wafer, respectively.