The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Feb. 07, 2022
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jordan D. Greenlee, Boise, ID (US);
Christian George Emor, Singapore, SG;
Travis Rampton, Meridian, ID (US);
Everett Allen McTeer, Eagle, ID (US);
Rita J. Klein, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/535 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01);
U.S. Cl.
CPC ...
H01L 23/535 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76876 (2013.01); H01L 21/76895 (2013.01); H01L 23/5283 (2013.01); H01L 23/53257 (2013.01); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02);
Abstract
Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.