The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
May. 10, 2021
Applicant:
Raytheon Company, Waltham, MA (US);
Inventors:
Michael J. Rondon, Santa Rosa, CA (US);
Shannon F. Wilkey, Lompoc, CA (US);
Michael V. Liguori, Buellton, CA (US);
Assignee:
RAYTHEON COMPANY, Waltham, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/683 (2006.01); B32B 7/12 (2006.01); C23C 14/10 (2006.01); C23C 14/14 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); B32B 7/12 (2013.01); C23C 14/10 (2013.01); C23C 14/14 (2013.01); B32B 2255/20 (2013.01);
Abstract
A method is provided to fabricate a wafer including a bonding layer interposed between a device wafer and a handle wafer. The method includes performing a first deposition process to deposit an ultraviolet (UV) shield layer on a backside surface of the handle wafer. A second deposition process is performed to deposit a stress compensation layer on an exposed surface of the UV shield layer. The UV shield layer blocks UV energy generated while performing the second deposition process from reaching the bonding layer.