The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jun. 19, 2022
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Yulei Wu, Hefei, CN;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/8234 (2006.01); H01L 21/311 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 21/31116 (2013.01); H01L 21/823481 (2013.01); H10B 12/488 (2023.02);
Abstract

A manufacturing method of a semiconductor structure includes: providing a target layer; forming a plurality of first mask patterns on a top surface of the target layer; forming a plurality of second mask patterns above the target layer, where each of the second mask patterns covers at least a part of a top surface of each of the first mask patterns and a part of the top surface of the target layer in an extension direction of the second mask pattern; performing a first etching on the target layer based on the second mask patterns; removing the second mask patterns; and performing a second etching on the target layer based on the first mask patterns.


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