The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Aug. 27, 2019
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Alexandre Likhanskii, Middleton, MA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/16 (2006.01); H01J 37/305 (2006.01); H01J 37/20 (2006.01); H01J 37/08 (2006.01);
U.S. Cl.
CPC ...
H01J 37/16 (2013.01); H01J 37/20 (2013.01); H01J 37/3053 (2013.01); H01J 37/08 (2013.01); H01J 2237/022 (2013.01);
Abstract

An apparatus for directional processing is disclosed. The apparatus includes a workpiece support and an ion source, having a plurality of walls. An extraction aperture is disposed on at least one of the plurality of walls. In certain embodiments, the plurality of walls defines a hollow region. The hollow region is located above the portion of the workpiece that is being processed, allowing the etching byproducts can be evacuated without depositing on the ion source. The shape of the hollow region may be modified to further reduce the amount of deposition on the hollow ion source. Additionally, a pump may be disposed within or above the hollow region to facilitate the removal of the etching byproducts. In other embodiments, the extraction aperture of the ion source may be disposed at a corner of the plasma chamber.


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