The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Apr. 27, 2021
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Jeremy Guy, San Jose, CA (US);

Sung Hyun Jo, Sunnyvale, CA (US);

Hagop Nazarian, San Jose, CA (US);

Ruchirkumar Shah, San Jose, CA (US);

Liang Zhao, Santa Clara, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/16 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3445 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 16/16 (2013.01); G11C 16/26 (2013.01);
Abstract

A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.


Find Patent Forward Citations

Loading…