The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jun. 22, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventor:

Ruxin Wei, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/14 (2006.01); G11C 16/30 (2006.01); G05F 1/46 (2006.01); G05F 1/575 (2006.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
G11C 16/30 (2013.01); G05F 1/461 (2013.01); G05F 1/575 (2013.01); H10B 41/41 (2023.02); H10B 43/40 (2023.02);
Abstract

In certain aspects, a circuit for power leakage blocking can include a voltage generation circuit that includes an amplifier connected at a negative input to a reference voltage and providing an output to a gate of a first transistor. A drain voltage of the first transistor can be fed back to a positive input of the amplifier. The voltage generation circuit can receive a first voltage at a source of the first transistor. The voltage generation circuit can supply a second voltage at a drain of the first transistor. The circuit can further include a pair of transistors. The pair of transistors can include a second transistor and a third transistor. Respective bulks of the pair of transistors can be connected to a bulk of the first transistor. The gates of the pair of transistors can be controlled according to a comparison between the first voltage and the second voltage, such that only one of the pair of transistors is on at a time.


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