The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 17, 2023

Filed:

Jun. 16, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Scott Weber, Piedmont, CA (US);

Jawad Khan, Portland, OR (US);

Ilya Ganusov, San Jose, CA (US);

Martin Langhammer, Salisbury, GB;

Matthew Adiletta, Bolton, MA (US);

Terence Magee, San Francisco, CA (US);

Albert Fazio, Saratoga, CA (US);

Richard Coulson, Portland, OR (US);

Ravi Gutala, San Jose, CA (US);

Aravind Dasu, Milpitas, CA (US);

Mahesh Iyer, Fremont, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0655 (2013.01); G06F 3/061 (2013.01); G06F 3/0673 (2013.01);
Abstract

A three dimensional circuit system includes a first integrated circuit die having a core logic region that has first memory circuits and logic circuits. The three dimensional circuit system includes a second integrated circuit die that has second memory circuits. The first and second integrated circuit dies are coupled together in a vertically stacked configuration. The three dimensional circuit system includes third memory circuits coupled to the first integrated circuit die. The third memory circuits reside in a plane of the first integrated circuit die. The logic circuits are coupled to access the first, second, and third memory circuits and data can move between the first, second, and third memories. The third memory circuits have a larger memory capacity and a smaller memory access bandwidth than the second memory circuits. The second memory circuits have a larger memory capacity and a smaller memory access bandwidth than the first memory circuits.


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