The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 17, 2023
Filed:
Jun. 04, 2019
Applicant:
Siltronic Ag, Munich, DE;
Inventors:
Ludwig Altmannshofer, Lenggries, DE;
Goetz Meisterernst, Mettenheim, DE;
Gundars Ratnieks, Burghausen, DE;
Simon Zitzelsberger, Neuoetting/Alzgern, DE;
Assignee:
Siltronic AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 13/20 (2006.01); C30B 13/12 (2006.01); C30B 29/06 (2006.01); C30B 30/04 (2006.01); H01L 21/02 (2006.01); C30B 13/26 (2006.01);
U.S. Cl.
CPC ...
C30B 13/20 (2013.01); C30B 13/12 (2013.01); C30B 13/26 (2013.01); C30B 29/06 (2013.01); C30B 30/04 (2013.01); H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02625 (2013.01);
Abstract
Single crystals of semiconductor material are produced by an FZ method, wherein a molten zone is created between a feed rod and a growing single crystal; the method involving
Altmannshofer, Ludwig. (2023). Method for producing a single crystal from semiconductor material by the fz method; device for carrying out the method and semiconductor silicon wafer (U.S. Patent No. 11788201). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11788201
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile