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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11785769 B1

PDFFull Text
Date of Patent:
Oct. 10, 2023

Filed:

Jul. 03, 2022

Manufacturing method of semiconductor device including floating gate and control gate

Applicant:

Winbond Electronics Corp., Taichung, TW;

Inventors:

Hsin-Huang Shen, Taichung, TW;

Yu-Shu Cheng, Taichung, TW;

Yao-Ting Tsai, Taichung, TW;

Assignee:

Winbond Electronics Corp., Taichung, TW;

Attorney:

JCIPRNET

Primary Examiner:

Marcos D Pizarro

Assistant Examiner:

William Henry Anderson

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H10B 41/30 (2023.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H10B 41/42 (2023.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H10B 41/30 (2023.02); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/40114 (2019.08); H01L 29/42324 (2013.01); H01L 29/66545 (2013.01); H01L 29/66598 (2013.01); H01L 29/66825 (2013.01); H01L 29/7833 (2013.01); H01L 29/7883 (2013.01); H10B 41/42 (2023.02); H01L 21/3213 (2013.01);
Abstract

A manufacturing method of semiconductor device is provided. In the manufacturing method, a tunneling dielectric layer, floating gates on the tunneling dielectric layer, an ONO layer on the floating gates, and control gates on the ONO layer are formed. During the formation of the floating gates and the control gates, reactive-ion etching (R.I.E.) is not used at all, and thus damage to the floating and control gates from high-density plasma is prevented, such as charge trap in the floating gates may be significantly reduced to improve the reliability of data storage.

Find Patent Forward Citations

Shen, Hsin-Huang. (2023). Manufacturing method of semiconductor device including floating gate and control gate (U.S. Patent No. 11785769). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11785769

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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