The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Jun. 23, 2021
Applicants:
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Nan Wang, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H10B 10/00 (2023.01); H01L 21/308 (2006.01); H01L 21/265 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H10B 10/12 (2023.02); H01L 21/26506 (2013.01); H01L 21/3086 (2013.01); H01L 21/31111 (2013.01); H01L 21/31155 (2013.01);
Abstract
A static random-access memory device is provided. The static random-access memory device includes a substrate with at least one first region; first fins on a surface of the substrate, and second initial fins on the surface of the substrate. A width of the second initial fins is different from a width of the first fins. A portion of the first fins is used to form pass-gate transistors, and another portion of the first fins and the second initial fins are used to form pull-down transistors.