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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11784255 B1

PDFFull Text
Date of Patent:
Oct. 10, 2023

Filed:

Dec. 11, 2020

Semiconductor devices with bent portions

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyun-Kwan Yu, Suwon-si, KR;

Sung-Min Kim, Incheon, KR;

Dong-Suk Shin, Yongin-si, KR;

Seung-Hun Lee, Hwaseong-si, KR;

Dong-Won Kim, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd.;

Attorney:

Myers Bigel, P.A.

Primary Examiner:

Matthew C Landau

Assistant Examiner:

Dmitriy Yemelyanov

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H10B 10/00 (2023.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 27/0886 (2013.01); H01L 29/0642 (2013.01); H01L 29/42372 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H10B 10/12 (2023.02); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 27/0924 (2013.01); H01L 27/1211 (2013.01);
Abstract

A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

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