The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Mar. 28, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
An-Chi Liu, Tainan, TW;
Chun-Hsien Lin, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/20 (2006.01); H01L 29/201 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 29/201 (2013.01); H01L 29/2003 (2013.01); H01L 29/404 (2013.01); H01L 29/778 (2013.01);
Abstract
A high electron mobility transistor (HEMT) includes a buffer layer on a substrate, a barrier layer on the buffer layer, a gate electrode on the barrier layer, a field plate adjacent to two sides of the gate electrode, and a first passivation layer adjacent to two sides of the gate electrode. Preferably, a sidewall of the field plate includes a first curve.