The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Mar. 03, 2022
Applicant:
Innoscience (Zhuhai) Technology Co., Ltd., Zhuhai, CN;
Inventors:
Assignee:
INNOSCIENC (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0843 (2013.01); H01L 29/66462 (2013.01); H01L 29/7787 (2013.01);
Abstract
The HEMT includes a channel layer, a barrier layer, a drain, and a gate conductor. The barrier layer is disposed on the channel layer. The drain is disposed on the barrier layer. The gate conductor is disposed on the barrier layer. The channel layer includes a doped semiconductor structure overlapping with a top surface of the channel layer and having a bottom-most border that is located over a bottom-most surface of the channel layer and is spaced apart from the bottom-most surface of the channel layer. The doped semiconductor structure is located between the drain and the gate conductor.