The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

May. 04, 2021
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Ping Zheng, Singapore, SG;

Eng Huat Toh, Singapore, SG;

Kiok Boone Elgin Quek, Singapore, SG;

Kien Seen Daniel Chong, Singapore, SG;

Jing Hua Michelle Tng, Singapore, SG;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/146 (2006.01); H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1461 (2013.01); H01L 27/1463 (2013.01); H01L 27/14627 (2013.01); H01L 27/14645 (2013.01); H01L 27/14689 (2013.01); H01L 31/107 (2013.01);
Abstract

Structures for a single-photon avalanche diode and methods of forming a structure for a single-photon avalanche diode. The structure includes a semiconductor substrate having a top surface, a semiconductor layer on the top surface of the semiconductor substrate, a light-absorbing layer on a portion of the semiconductor layer, and a doped region in the portion of the semiconductor layer. The doped region is positioned in the portion of the semiconductor layer adjacent to the light-absorbing layer.


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