The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Jan. 06, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventor:
Martin Christopher Holland, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); C30B 29/08 (2006.01); H01L 29/78 (2006.01); C30B 19/10 (2006.01); C30B 19/12 (2006.01); C30B 29/06 (2006.01); H01L 29/06 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02653 (2013.01); C30B 19/106 (2013.01); C30B 19/12 (2013.01); C30B 29/06 (2013.01); C30B 29/08 (2013.01); H01L 21/02488 (2013.01); H01L 21/02532 (2013.01); H01L 21/02625 (2013.01); H01L 21/02645 (2013.01); H01L 21/7624 (2013.01); H01L 29/04 (2013.01); H01L 29/0649 (2013.01); H01L 29/7838 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a template layer disposed over a substrate and having a trench therein, a buffer structure disposed over a bottom surface of the trench and comprising a metal oxide, a single crystal semiconductor structure disposed within the trench and over the buffer structure and a gate structure disposed over a channel region of the single crystal semiconductor structure.