The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Jun. 17, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Fu Lee, Hsinchu, TW;

Hon-Jarn Lin, New Taipei, TW;

Yu-Der Chih, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 7/06 (2006.01);
U.S. Cl.
CPC ...
G11C 7/062 (2013.01); G11C 2207/063 (2013.01);
Abstract

A sense amplifier is provided. A first terminal of a first invertor is connected to a power node and a second terminal of the first invertor is connected to a cell current source. A first terminal of a second invertor is connected to the power node and a second terminal of the second invertor is connected to a reference current source. The first invertor is cross coupled with the second invertor at a first node and a second node. A pre-charge circuit is connected to the first node and the second node. A first pull up transistor and a second pull up transistor are connected between a supply voltage node and the power node. A signal level detector circuit is connected to the second pull up transistor. The signal level detector circuit switches on the second pull up transistor when a remaining voltage on one of the first node and the second node is below a reference voltage.


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