The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 10, 2023
Filed:
Jul. 27, 2021
Applicant:
Globalwafers Co., Ltd., Hsinchu, TW;
Inventor:
Ching-Shan Lin, Hsinchu, TW;
Assignee:
GlobalWafers Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/02 (2006.01); C30B 29/36 (2006.01); C30B 23/06 (2006.01); C01B 32/956 (2017.01); H01L 29/30 (2006.01);
U.S. Cl.
CPC ...
C30B 23/025 (2013.01); C30B 23/066 (2013.01); C30B 29/36 (2013.01); C01B 32/956 (2017.08); H01L 29/30 (2013.01);
Abstract
A silicon carbide seed crystal and method of manufacturing the same, and method of manufacturing silicon carbide ingot are provided. The silicon carbide seed crystal has a silicon surface and a carbon surface opposite to the silicon surface. A difference D between a basal plane dislocation density BPD1 of the silicon surface BPD1 and a basal plane dislocation density BPD2 of the carbon surface satisfies the following formula (1):=(BPD1−BPD2)/BPD1≤25%  (1).