The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Feb. 09, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Masahiro Yokomichi, Hiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); H10B 12/00 (2023.01); G11C 5/06 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H10B 12/50 (2023.02); G11C 5/063 (2013.01); G11C 11/4085 (2013.01); H01L 29/41775 (2013.01);
Abstract

Semiconductor devices including active regions and gate electrodes are disclosed. An example semiconductor device according to the disclosure includes a gate electrode extending in a first direction, and first and second active regions extending in a second direction. The gate electrode has a side extending in the first direction. The first active region includes: a first center portion having a first width in the first direction; and a first end portion disposed at a first end of the first center portion, and having a second width in the first direction that is greater than the first width. The second active region includes: a second center portion having a third width in the first direction. The gate electrode overlaps along the side with portions of the first end portion and the second center portion.


Find Patent Forward Citations

Loading…