Cross fet sram cell layout

Abstract

A system and method for efficiently creating layout for memory bit cells are described. In various implementations, a memory bit cell uses Cross field effect transistors (FETs) that include vertically stacked gate all around (GAA) transistors with conducting channels oriented in an orthogonal direction between them. The channels of the vertically stacked transistors use opposite doping polarities. The memory bit cell includes one of a read bit line and a write word line routed in no other metal layer other than a local interconnect layer. In addition, a six transistor (6T) random access data storage of the given memory bit cell consumes a planar area above a silicon substrate of four transistors.