The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Mar. 24, 2022
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hiroshi Akamatsu, Boise, ID (US);

Yuan He, Boise, ID (US);

Toru Ishikawa, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/40 (2006.01); H03K 17/16 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
H03K 17/161 (2013.01); G06F 13/4077 (2013.01); G11C 7/1048 (2013.01);
Abstract

Charge transfer between gate terminals of sub-threshold current reduction circuit (SCRC) transistors and related apparatuses and methods are disclosed. An apparatus includes a first output terminal electrically connected to a pull-up gate terminal of at least one pull-up SCRC transistor and a second output terminal electrically connected to a pull-down gate terminal of at least one pull-down SCRC transistor. The apparatus also includes a first resistive path between a first input terminal and the first output terminal and a second resistive path between the second input terminal and the second output terminal. The apparatus further includes a charge transfer gate electrically connected between the first resistive path and the second resistive path.


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