The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Mar. 17, 2021
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventor:

Chin-Chin Tsai, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42344 (2013.01); H01L 21/02238 (2013.01); H01L 21/76224 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

A method for fabricating memory device is provided. The method comprises forming a cell structure on a substrate, wherein the cell structure comprises a first gate structure and a second gate structure disposed on a substrate and an insulating layer in contact between the first gate structure and the second gate structure, wherein the first gate structure and the second gate structure are planarized and the first gate structure is for storing charges. Further, the first gate structure and the second gate structure are patterned to have a shallow indent above the insulating layer. An isolation structure is formed in the shallow indent to have a shallow indent isolation.


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