The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Apr. 30, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Kangguo Cheng, Schenectady, NY (US);
Jeehwan Kim, Cambridge, MA (US);
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 21/8234 (2006.01); H01L 29/201 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/02381 (2013.01); H01L 21/02461 (2013.01); H01L 21/02546 (2013.01); H01L 21/3083 (2013.01); H01L 21/30612 (2013.01); H01L 21/823431 (2013.01); H01L 29/1054 (2013.01); H01L 29/201 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 29/66545 (2013.01);
Abstract
A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.