The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Mar. 25, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsu-Lun Liu, Tainan, TW;
Wen-Hsiung Lu, Tainan, TW;
Ming-Da Cheng, Taoyuan, TW;
Chen-En Yen, Tainan, TW;
Cheng-Lung Yang, Kaohsiung, TW;
Kuanchih Huang, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.