The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 03, 2023

Filed:

Apr. 19, 2021
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wan Hsuan Hsu, Taoyuan, TW;

Jao Sheng Huang, Jiayi, TW;

Yen-Chiu Kuo, Tainan, TW;

Yu-Li Cheng, Tainan, TW;

Ya Tzu Chen, Tainan, TW;

Neng-Jye Yang, Hsinchu, TW;

Chun-Li Chou, Jhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/311 (2006.01); H01L 21/02 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31111 (2013.01); H01L 21/0206 (2013.01); H01L 21/02178 (2013.01); H01L 21/02186 (2013.01); H01L 21/31144 (2013.01); H01L 21/6708 (2013.01); H01L 21/68764 (2013.01);
Abstract

An apparatus, semiconductor device and method of manufacture are presented, wherein a hard mask layer and one or more etch stop layers are etched in an etching chamber. In an embodiment the semiconductor device is placed on a mounting platform at a first height and an etch process is performed, then the semiconductor device is moved to a second height within the chamber and a second etch process is performed, with the rotational speed of the semiconductor device reduced during movements in order to reduce the chance of cross contamination.


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