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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11774296 B1

PDFFull Text
Date of Patent:
Oct. 03, 2023

Filed:

Nov. 11, 2021

Method and circuit for sensing mosfet temperature for load switch application

Applicant:

Alpha and Omega Semiconductor International Lp, Toronto, CA;

Inventors:

Zhenyu Wang, Santa Clara, CA (US);

Jian Yin, San Ramon, CA (US);

Lingpeng Guan, San Jose, CA (US);

Sitthipong Angkititrakul, Dublin, CA (US);

Christopher Ben Bartholomeusz, Draper, UT (US);

Xiaobin Wang, San Jose, CA (US);

Assignee:

ALPHA AND OMEGA SEMICONDUCTOR INTERNATIONAL LP, Toronto, CA;

Attorneys:

JDI PATENT

Joshua D. Isenberg

Robert Pullman

Primary Examiner:

Scott Bauer

Int. Cl.
CPC ...
G01K 7/01 (2006.01); H02H 5/04 (2006.01); G01K 7/22 (2006.01); G01K 7/28 (2006.01); H02H 9/00 (2006.01); H02H 9/02 (2006.01); H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
G01K 7/01 (2013.01); G01K 7/22 (2013.01); G01K 7/28 (2013.01); H02H 9/00 (2013.01); H02H 9/02 (2013.01); H02H 9/04 (2013.01);
Abstract

A method and device for temperature monitoring of a power transistor formed in a semiconductor die comprising are disclosed. A side of a temperature-sensing resistor disposed in the semiconductor die is coupled to a voltage input side of the power transistor. A controller coupled to a second side of the temperature-sensing resistor is configured to detect a voltage across the resistor and trigger a temperature related corrective action using the detected voltage.

Find Patent Forward Citations

Wang, Zhenyu. (2023). Method and circuit for sensing mosfet temperature for load switch application (U.S. Patent No. 11774296). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11774296

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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