The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Jun. 18, 2020
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Assignee:
Resonac Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/36 (2006.01); C30B 23/02 (2006.01); C01B 32/956 (2017.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/36 (2013.01); C01B 32/956 (2017.08); C30B 23/02 (2013.01); C30B 23/025 (2013.01); H01L 29/1608 (2013.01); C01P 2002/78 (2013.01); H01L 21/02378 (2013.01); H01L 21/02433 (2013.01); H01L 21/02529 (2013.01); H01L 21/02609 (2013.01); H01L 21/02631 (2013.01);
Abstract
A SiC single crystal, including: a seed crystal; a first growth portion formed in a direction that is substantially orthogonal to a <0001> direction; a second growth portion formed in a direction that is substantially orthogonal to the <0001> direction and substantially orthogonal to the direction in which the first growth portion is formed; a third growth portion that is formed on a surface of the seed crystal opposite the first growth portion; and a fourth growth portion that is formed on a surface of the seed crystal opposite the second growth portion.