The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2023
Filed:
Mar. 22, 2021
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Ching-Kai Shen, Hsinchu County, TW;
Yi-Chuan Teng, Hsinchu County, TW;
Wei-Chu Lin, Hsinchu, TW;
Hung-Wei Liang, New Taipei, TW;
Jung-Kuo Tu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0041 (2013.01); B81C 1/00293 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2207/07 (2013.01); B81C 2203/0145 (2013.01);
Abstract
The present disclosure provides a method for fabricating a semiconductor structure, including bonding a capping substrate over a sensing substrate, forming a through hole traversing the capping substrate, forming a dielectric layer over the capping substrate under a first vacuum level, and forming a metal layer over the dielectric layer under a second vacuum level, wherein the second vacuum level is higher than the first vacuum level.