The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
May. 20, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Nuo Xu, Milpitas, CA (US);
Zhiqiang Wu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/51 (2006.01); G11C 11/22 (2006.01); H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H01L 29/40111 (2019.08); G11C 11/221 (2013.01); G11C 11/223 (2013.01); H01L 29/512 (2013.01); H01L 29/513 (2013.01); H01L 29/6684 (2013.01); H01L 29/66666 (2013.01); H01L 29/66795 (2013.01); H01L 29/78391 (2014.09); H10B 51/20 (2023.02); H10B 51/30 (2023.02); G11C 11/2259 (2013.01); H01L 29/517 (2013.01); H01L 29/785 (2013.01); H01L 29/7853 (2013.01);
Abstract
A method includes providing a substrate including a channel region, the substrate comprising a two-stage structure having a first surface, a second surface higher than the first surface and a third surface connected between the first surface and the second surface; covering the substrate from a top thereof with an oxide layer; forming a ferroelectric material strip on a topmost surface of the oxide layer; and forming a gate strip covering the ferroelectric material strip and the oxide layer from a top of the gate strip.