The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Mar. 25, 2021
Nxp B.v., Eindhoven, NL;
Tushar Praful Merchant, Austin, TX (US);
Mark Douglas Hall, Austin, TX (US);
Anirban Roy, Austin, TX (US);
NXP B.V., Eindhoven, NL;
Abstract
A nanosheet semiconductor device and fabrication method are described for integrating the fabrication of nanosheet transistors () and capacitors/sensors () in a single nanosheet process flow by forming separate transistor and capacitor/sensor stacks (A-A,B-B) which are selectively processed to form gate electrode structures (A-C) which replace remnant SiGe sandwich layers in the transistor stack, to form silicon fixed electrodes using silicon nanosheets (C,C) on a first side of the capacitor/sensor stack, and to form SiGe fixed electrodes using SiGe nanosheets (C,C,C) from the middle of remnant SiGe sandwich layers in the capacitor/sensor stack (e.g.,-) which are separated from the silicon fixed electrodes by selectively removing top and bottom SiGe nanosheets (e.g.,--) from the remnant SiGe sandwich layers in the capacitor/sensor stack.