The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Mar. 04, 2021
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Jisong Jin, Shanghai, CN;
Abraham Yoo, Shanghai, CN;
Abstract
The method includes providing a to-be-etched layer including an first region and a second region adjoining the first region, forming a first mask layer on the to-be-etched layer, forming a patterned core layer on the first mask layer of the first region, forming a sidewall spacer on the core layer and the first mask layer, forming a first sacrificial layer on the sidewall spacer on the surface of the first mask layer of the second region, forming a second sacrificial layer on the sidewall spacer, removing the first sacrificial layer, the sidewall spacer on the surface of the first mask layer of the second region, and the sidewall spacer on a top of the core layer, removing the core layer, etching the first mask layer of the first region to form a first trench, and etching the first mask layer of the second region to form a second trench.