The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2023

Filed:

Dec. 23, 2021
Applicants:

Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;

Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;

Inventors:

Shengfen Chiu, Shanghai, CN;

Liang Chen, Shanghai, CN;

Liang Han, Shanghai, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/764 (2006.01); H01L 21/311 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01); H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H10B 41/30 (2023.01);
U.S. Cl.
CPC ...
H01L 21/764 (2013.01); H01L 21/31111 (2013.01); H01L 21/768 (2013.01); H01L 21/823481 (2013.01); H01L 29/0649 (2013.01); H01L 29/42324 (2013.01); H01L 29/4991 (2013.01); H01L 29/515 (2013.01); H10B 41/30 (2023.02);
Abstract

A method for manufacturing a flash memory device is provided. The method includes: providing a substrate structure including a substrate, a plurality of active regions and a plurality of first isolation regions alternately arranged in a first direction and extending in a second direction different from the first direction, a plurality of gate structures on the substrate, the gate structures being spaced apart from each other and extending in the second direction, and a gap structure between the gate structures; forming an overhang surrounding an upper portion of the gate structures to form a gap structure between the gate structures; and forming a second isolation region filling an upper portion of the gap structures and leaving a first air gap between the gap structures.


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