The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Jul. 19, 2021
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Rui Cheng, Santa Clara, CA (US);
Fei Wang, Fremont, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Robert Jan Visser, Menlo Park, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); A61K 9/00 (2006.01); A61K 31/438 (2006.01); A61K 31/4409 (2006.01); A61K 31/47 (2006.01); A61K 31/497 (2006.01); A61K 47/12 (2006.01); A61K 47/26 (2006.01); A61K 47/36 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02636 (2013.01); A61K 9/0024 (2013.01); A61K 31/438 (2013.01); A61K 31/4409 (2013.01); A61K 31/47 (2013.01); A61K 31/497 (2013.01); A61K 47/12 (2013.01); A61K 47/26 (2013.01); A61K 47/36 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 21/02642 (2013.01); H01L 21/02664 (2013.01); H01L 21/3065 (2013.01);
Abstract
Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces.