The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 26, 2023
Filed:
Dec. 20, 2018
Applicant:
Nissan Chemical Corporation, Tokyo, JP;
Inventors:
Assignee:
NISSAN CHEMICAL CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/40 (2006.01); C08L 33/06 (2006.01); C08L 33/14 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); G03F 7/11 (2006.01); H01L 21/308 (2006.01); H01L 21/033 (2006.01); C09D 133/06 (2006.01); G03F 7/09 (2006.01);
U.S. Cl.
CPC ...
G03F 7/40 (2013.01); C08L 33/066 (2013.01); C08L 33/068 (2013.01); C08L 33/14 (2013.01); C09D 133/066 (2013.01); C23C 16/0227 (2013.01); C23C 16/45534 (2013.01); G03F 7/094 (2013.01); G03F 7/11 (2013.01); H01L 21/0332 (2013.01); H01L 21/308 (2013.01); C08L 2201/56 (2013.01);
Abstract
A protective film-forming composition which protects against a semiconductor wet etching solution, contains a solvent and a compound or polymer thereof containing at least one pair including two adjacent hydroxyl groups in a molecule thereof, and forms a protective film which can quickly be removed by dry etching and exhibits excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a resist pattern-equipped substrate which uses the protective film; and a method for producing a semiconductor device.