The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Sep. 01, 2022
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Ching-Wen Hung, Tainan, TW;
Ya-Sheng Feng, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2023.01); H01L 21/768 (2006.01); H10N 50/01 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); H01L 21/76801 (2013.01); H01L 21/76838 (2013.01); H10N 50/01 (2023.02);
Abstract
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a metal interconnection in the first IMD layer; forming a bottom electrode layer and a pinned layer on the first IMD layer; forming a sacrificial layer on the pinned layer; patterning the sacrificial layer, the pinned layer, and the bottom electrode layer to form a first magnetic tunneling junction (MTJ); forming a second IMD layer around the first MTJ; and removing the sacrificial layer.