The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

May. 29, 2022
Applicant:

Board of Regents of the University of Nebraska, Lincoln, NE (US);

Inventors:

Nishtha Sharma Gaul, Richardson, TX (US);

Andrew Marshall, Dallas, TX (US);

Peter A. Dowben, Crete, NE (US);

Dmitri E. Nikonov, Beaverton, OR (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/16 (2006.01); H01L 29/423 (2006.01); H03K 19/10 (2006.01); H03K 19/21 (2006.01);
U.S. Cl.
CPC ...
H03K 19/16 (2013.01); H01L 29/42312 (2013.01); H03K 19/10 (2013.01); H03K 19/21 (2013.01);
Abstract

A magneto-electric (ME) majority gate device includes a conducting device and a plurality of ME transistors coupled to the conducting device. In one implementation, the plurality of ME transistors include a ME AND gate device with downward interface polarization, a ME-transmission gate device with downward interface polarization, and a ME-XNOR gate device. In another implementation, the plurality of ME transistors is five single-input ME-FETs.


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