The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Apr. 13, 2021
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventor:
Nan Wang, Shanghai, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 21/823431 (2013.01); H01L 29/0649 (2013.01); H01L 29/66553 (2013.01); H01L 29/66795 (2013.01);
Abstract
A semiconductor structure and its fabrication method are provided. The method includes: providing a substrate; forming an isolation structure on the substrate; forming a gate structure on the isolation structure; forming a first opening in the gate structure; and forming a first conductive structure in the first opening. Sidewall surfaces of the first conductive structure are in contact with a gate electrode layer of the gate structure.